Author :
Ohta, H. ; Hori, M. ; Shima, M. ; Mori, H. ; Shimamune, Y. ; Sakuma, T. ; Hatada, A. ; Katakami, A. ; Kim, Y. ; Kawamura, K. ; Owada, T. ; Morioka, H. ; Watanabe, T. ; Hayami, Y. ; Ogura, J. ; Tamura, N. ; Kojima, M. ; Hashimoto, K.
Abstract :
Aggressively scaled 30nm gate CMOSFETs for 45nm node is reported. We successfully improved a higher drive current with keeping the short channel effect by Sigma shaped SiGe-source/drain (Sigma SiGe) structure using compressive-stressed liner. In addition, we developed novel stack-SIN gate dielectrics by using bis-tertiarybutylamino-silane (BTBAS)/NH3. Novel stack-SIN gate dielectrics show higher immunity to negative bias temperature instability (NBTI) and time-dependent dielectric breakdown (TDDB) lifetime compared with conventional plasma nitrided silicon dioxide. These characteristic are originated from its unique nitrogen profile. The nitrogen concentration is over 22% at the surface of the dielectric and it rapidly decreases to 1% at the interface with a substrate. A high performance 30 nm gate nMOSFET and pMOSFET were demonstrated with a drive currents of 1042 muA/mum and 602 muA/mum at Vd = 1 V / Ioff=100 nA/mum, respectively
Keywords :
Ge-Si alloys; MOSFET; dielectric materials; electric breakdown; nanotechnology; organic compounds; thermal stability; 1 V; 30 nm; 45 nm; CMOSFET; NBTI; SiGe; SiN; TDDB lifetime; bis-tertiarybutylamino-silane; compressive-stressed liner; drive current; gate dielectrics; high performance CMOS; nMOSFET; negative bias temperature instability; pMOSFET; short channel effect; time-dependent dielectric breakdown; uniaxial strained silicon; CMOSFETs; Dielectric breakdown; Dielectric substrates; Germanium silicon alloys; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Nitrogen; Silicon germanium; Titanium compounds;
