Title :
Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoelectronic mixer
Author :
Shaharuddin, Nur Amirah ; Idrus, Sevia Mahdaliza ; Isahak, Suhaila ; Zulkifli, Nadiatulhuda
Author_Institution :
Lightwave Commun. Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia
Abstract :
The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-conversion which is optoelectronic mixer for millimeter wave radio over fiber application.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave mixers; optoelectronic devices; radio-over-fibre; semiconductor doping; HBT OEM; InP-InGaAs; doping concentration; frequency up-conversion; heterojunction bipolar transistor; millimeter wave radio over fiber; optoelectronic mixer; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Millimeter wave transistors; Mixers; Performance evaluation; Heterojunction bipolar transistor; optoelectronic mixer; radio over fiber;
Conference_Titel :
Communications (APCC), 2012 18th Asia-Pacific Conference on
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4673-4726-6
Electronic_ISBN :
978-1-4673-4727-3
DOI :
10.1109/APCC.2012.6388266
