Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoelectronic mixer

Author

Shaharuddin, Nur Amirah ; Idrus, Sevia Mahdaliza ; Isahak, Suhaila ; Zulkifli, Nadiatulhuda

Author_Institution

Lightwave Commun. Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

602

Lastpage

605

Abstract

The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-conversion which is optoelectronic mixer for millimeter wave radio over fiber application.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave mixers; optoelectronic devices; radio-over-fibre; semiconductor doping; HBT OEM; InP-InGaAs; doping concentration; frequency up-conversion; heterojunction bipolar transistor; millimeter wave radio over fiber; optoelectronic mixer; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Millimeter wave transistors; Mixers; Performance evaluation; Heterojunction bipolar transistor; optoelectronic mixer; radio over fiber;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications (APCC), 2012 18th Asia-Pacific Conference on

Conference_Location

Jeju Island

Print_ISBN

978-1-4673-4726-6

Electronic_ISBN

978-1-4673-4727-3

Type

conf

DOI

10.1109/APCC.2012.6388266

Filename

6388266