DocumentCode :
262663
Title :
Session 25 overview: High-bandwidth low-power DRAM and I/O: Memory subcommittee
Author :
Kang, Uksong ; Sung, James
Author_Institution :
Samsung Electronics, Hwasung, Korea
fYear :
2014
fDate :
9-13 Feb. 2014
Firstpage :
428
Lastpage :
429
Abstract :
Requirements for high bandwidth and low power continue to increase in servers and consumer electronics. There are significant challenges in DRAMs to meet all such needs in various applications. In ISSCC 2014, the first LPDDR4 DRAM for mobile applications is demonstrated which has an integrated ECC engine for low-power operation. Next, the first High-Bandwidth Memory (HBM) with 4 TSV stacked layers achieving 128GB/s bandwidth is disclosed. Also, new circuits to reduce standby and I/O power in GDDR5M are shown. The papers in this session present the latest technologies and circuit techniques to improve the performance and power in DRAMs.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
978-1-4799-0918-6
Type :
conf
DOI :
10.1109/ISSCC.2014.6757571
Filename :
6757571
Link To Document :
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