• DocumentCode
    2626806
  • Title

    A 76 x 77mm/sup 2/, 16.85 Million Pixel CMOS APS Image Sensor

  • Author

    Ay, Suat U. ; Fossum, Eric R.

  • Author_Institution
    Micron Technol., Inc., Pasadena, CA
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    A 16.85 million pixel (4,096 times 4,114), single die (76mm times 77mm) CMOS active pixel sensor (APS) image sensor with 1.35Me- pixel well-depth was designed, fabricated, and tested in a 0.5mum CMOS process with a stitching option. A hybrid photodiode-photogate (HPDPG) APS pixel technology was developed. Pixel pitch was 18mum. The developed image sensor was the world´s largest single-die CMOS image sensor fabricated on a 6-inch silicon wafer
  • Keywords
    CMOS image sensors; photodiodes; 16.85E6 pixel; 6 inch; APS pixel; CMOS image sensor; hybrid photodiode-photogate; stitching option; CMOS image sensors; CMOS process; CMOS technology; Circuits; Decoding; Digital control; Fabrication; Image sensors; Pixel; Sensor arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    1-4244-0006-6
  • Type

    conf

  • DOI
    10.1109/VLSIC.2006.1705291
  • Filename
    1705291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2626806