Title :
A new DC-EST structure with low losses and improved FBSOAa
Author :
Bo Zhang ; Huang, Alex Q. ; You, Budong
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
A new dual-channel emitted switched thyristor (DC-EST) structure with low conduction loss and improved forward biased safe operating area (FBSOA) is proposed for the first time. It uses a P-channel MOSFET with current dependent channel resistance to improve the trade-off relationship between the FBSOA and the forward voltage drop. Its operation is analyzed and demonstrated by 2-D simulations
Keywords :
losses; power MOSFET; safety; semiconductor device models; thyristors; 2-D simulations; P-channel MOSFET; current dependent channel resistance; dual-channel emitted switched thyristor; forward biased safe operating area; forward voltage drop; losses; Analytical models; Anodes; Cathodes; Current density; Electrodes; Low voltage; MOSFET circuits; Power electronics; Thyristors; Voltage control;
Conference_Titel :
Power Electronics Congress, 1998. CIEP 98. VI IEEE International
Conference_Location :
Morelia
Print_ISBN :
0-7803-5006-5
DOI :
10.1109/CIEP.1998.750676
