Title :
Protecting against emerging vmin failures in advanced technology nodes
Author :
Lee, J. K. Jerry ; Haggag, Amr ; Eklow, William
Author_Institution :
Cisco Syst., Inc., San Jose, CA, USA
Abstract :
As technology and voltage scale, both intrinsic and extrinsic Vmin failures can occur at a significant rate. These failures can impact yield and reliability. We propose a novel guardband and advanced outlier limits (AOL) methodology to protect against intrinsic and extrinsic Vmin failures. This paper will demonstrate the impact of aging, RTN and HKMG process variation on Vmin. The data will be used to establish guardbands and AOL to minimize failures during testing and in the field.
Keywords :
ageing; high-k dielectric thin films; integrated circuit noise; integrated circuit reliability; integrated circuit yield; HKMG process variation; RTN effect; advanced outlier limits method; advanced technology nodes; aging effect; guardband method; high-k/metal gate process variation; integrated circuit reliability; integrated circuit yield; minimum operating voltage failures; random telegraph noise; Aging; Fluctuations; Logic gates; Noise; Random access memory; Transistors;
Conference_Titel :
Test Conference (ITC), 2014 IEEE International
Conference_Location :
Seattle, WA
DOI :
10.1109/TEST.2014.7035278
