DocumentCode :
2627360
Title :
Impact of Layout on 90nm CMOS Process Parameter Fluctuations
Author :
Pang, Liang-Teck ; Nikolic, Borivoje
Author_Institution :
California Univ., Berkeley, CA
fYear :
0
fDate :
0-0 0
Firstpage :
69
Lastpage :
70
Abstract :
A test chip has been built to study the effects of layout on the delay and leakage of digital circuits in 90nm CMOS. The delay is characterized through the spread of ring oscillator frequencies and the transistor leakage is measured by using an on-chip ADC
Keywords :
CMOS digital integrated circuits; integrated circuit layout; integrated circuit testing; leakage currents; 90 nm; CMOS process; analog digital converter; digital circuit delay; digital circuit leakage; ring oscillator frequencies; test chip layout; transistor leakage; CMOS process; Circuit testing; Delay effects; Fingers; Fluctuations; Frequency measurement; Leakage current; Ring oscillators; Semiconductor device measurement; Tiles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
Type :
conf
DOI :
10.1109/VLSIC.2006.1705316
Filename :
1705316
Link To Document :
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