An Integrated 1.8V to 3.3V Regulated Voltage Doubler Using Active Diodes and Dual-Loop Voltage Follower for Switch-Capacitive Load

Author

Lam, Yat-Hei ; Ki, Wing-Hung ; Tsui, Chi-ying

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol.

fYear

0

fDate

0-0 0

Firstpage

85

Lastpage

86

Abstract

An integrated 1.8V to 3.3V regulated voltage doubler is presented. Active diodes realized by MOS transistors only are employed to prevent reverse charge transfer. The switching low dropout regulator consists of a dual-loop voltage follower that could drive a large switch-capacitive load and achieves a fast load transient of less than 5mus for a 140mA current step. The regulated doubler was fabricated in a 0.35mum CMOS process occupying an area of 0.74mm²

Keywords

CMOS integrated circuits; operational amplifiers; semiconductor diodes; switched capacitor networks; voltage multipliers; voltage regulators; 0.35 micron; 1.8 to 3.3 V; 140 mA; CMOS process; MOS transistors; active diodes; dual-loop voltage follower; low dropout regulator; regulated voltage doubler; reverse charge transfer; switch-capacitive load; CMOS process; Charge pumps; Charge transfer; Clocks; Diodes; MOSFETs; Regulators; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0006-6

Type

conf

DOI

10.1109/VLSIC.2006.1705324

Filename

1705324