Title :
An Integrated 1.8V to 3.3V Regulated Voltage Doubler Using Active Diodes and Dual-Loop Voltage Follower for Switch-Capacitive Load
Author :
Lam, Yat-Hei ; Ki, Wing-Hung ; Tsui, Chi-ying
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol.
Abstract :
An integrated 1.8V to 3.3V regulated voltage doubler is presented. Active diodes realized by MOS transistors only are employed to prevent reverse charge transfer. The switching low dropout regulator consists of a dual-loop voltage follower that could drive a large switch-capacitive load and achieves a fast load transient of less than 5mus for a 140mA current step. The regulated doubler was fabricated in a 0.35mum CMOS process occupying an area of 0.74mm2
Keywords :
CMOS integrated circuits; operational amplifiers; semiconductor diodes; switched capacitor networks; voltage multipliers; voltage regulators; 0.35 micron; 1.8 to 3.3 V; 140 mA; CMOS process; MOS transistors; active diodes; dual-loop voltage follower; low dropout regulator; regulated voltage doubler; reverse charge transfer; switch-capacitive load; CMOS process; Charge pumps; Charge transfer; Clocks; Diodes; MOSFETs; Regulators; Switches; Switching circuits; Voltage;
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
DOI :
10.1109/VLSIC.2006.1705324
