DocumentCode :
262767
Title :
Thermal-aware mobile SoC design and test in 14nm finfet technology
Author :
Bong Hyun zLee
Author_Institution :
Samsung, South Korea
fYear :
2014
fDate :
20-23 Oct. 2014
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. Thermal characteristic is one of the key specifications in mobile SOC products. Typically, process scaling tends to improve global thermal characteristics by power reduction; however, it also increases local hot-spot issues due to higher power density. Moreover, the finfet device technology introduces a new thermal problem, called “self-heating.” Therefore, Samsung is considering thermal issues comprehensively from design to test in order to ensure both product yield and quality. In this talk, we will address three key thermal problems; the self-heating in finfet device, the on-chip thermal hot-spots, and the set-level thermal-induced performance degradation. To tackle these obstacles, the design and test flows were enhanced to prevent and screen the thermal problems, and they were validated in the first mobile SOC product of 14nm finfet process.
Keywords :
MOSFET; integrated circuit design; integrated circuit testing; product quality; system-on-chip; FinFet technology; Samsung; global thermal characteristics; local hot-spot issues; mobile products; mobile test; on-chip thermal hot-spots; power reduction; product quality; product yield; self-heating; set-level thermal-induced performance degradation; size 14 nm; thermal-aware mobile SoC design; Abstracts; Density measurement; Heating; Power system measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference (ITC), 2014 IEEE International
Conference_Location :
Seattle, WA
Type :
conf
DOI :
10.1109/TEST.2014.7035320
Filename :
7035320
Link To Document :
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