Title :
A Non-Volatile 2Mbit CBRAM Memory Core Featuring Advanced Read and Program Control
Author :
Honigschmid, H. ; Angerbauer, M. ; Dietrich, S. ; Dimitrova, M. ; Gogl, D. ; Liaw, C. ; Markert, M. ; Symanczyk, R. ; Altimime, L. ; Bournat, S. ; Muller, Gunter
Author_Institution :
Infineon Technol., Neubiberg
Abstract :
A 2Mbit CBRAM (conductive bridging random access memory) core has been developed utilizing a 90nm, VDD = 1.5V process technology. The presented design uses an 8F2 (0.0648mum2) 1T1CBJ (1-transistor/1-conductive bridging junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times les50ns are demonstrated
Keywords :
integrated circuit design; logic design; memory architecture; random-access storage; 1.5 V; 2 Mbit; 90 nm; conductive bridging junction; conductive bridging random access memory; dummy cell bleeder devices; nonvolatile memory; program charge control; Bridge circuits; Circuit simulation; Electrical resistance measurement; Electrodes; Feedback; Glass; Nonvolatile memory; Operational amplifiers; Random access memory; Voltage control;
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
DOI :
10.1109/VLSIC.2006.1705334
