DocumentCode :
2627767
Title :
Radiation characteristics of hall-sensor on the base of gallium arsenide
Author :
Karlova, G.F. ; Gradoboev, A.V.
Author_Institution :
Tomsk Univ. of Control Syst. & Radioelectron., Tomsk, Russia
fYear :
2013
fDate :
12-13 Sept. 2013
Firstpage :
1
Lastpage :
3
Abstract :
Influence of gamma radiation on sensors based on GaAs is considered. The volt-ampere characteristics and the noise spectral density of magnetic field sensors before and after irradiations were investigated. It was found stabilizing effect of gamma radiation on sensors with the dose (8-10) ·103 Gy and destroying effect at the greater doses.
Keywords :
Hall effect devices; III-V semiconductors; gallium arsenide; gamma-ray effects; magnetic field measurement; magnetic sensors; Hall-sensor; gallium arsenide; gamma radiation; magnetic field sensors; noise spectral density; radiation characteristics; volt-ampere characteristics; Charge carriers; Magnetic sensors; Noise; Radiation effects; Sensor phenomena and characterization; Voltage measurement; gallium arsenide; gamma-quanta; sensor of magnetic field; volt-ampere characteristics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control and Communications (SIBCON), 2013 International Siberian Conference on
Conference_Location :
Krasnoyarsk
Print_ISBN :
978-1-4799-1060-1
Type :
conf
DOI :
10.1109/SIBCON.2013.6693581
Filename :
6693581
Link To Document :
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