DocumentCode
2627783
Title
A Novel Program and Read Architecture for Contact-Less Virtual Ground NOR Flash Memory for High Density Application
Author
Ito, Nobuhiko ; Yamauchi, Yoshimitsu ; Ueda, Naoki ; Yamamoto, Kaoru ; Sugita, Yasuhiro ; Mineyama, Takitsugu ; Ishihama, Akira ; Moritani, Kazuhiro
Author_Institution
Adv. Technol. Dev. Labs., Sharp Corp., Nara
fYear
0
fDate
0-0 0
Firstpage
116
Lastpage
117
Abstract
We have successfully developed multilevel (MLC) contact-less virtual ground array (VGA-NOR) flash memory. Sequential program from the source side edge cell of each segment and 32cells unit program with data buffer enable to cancel the Vt interference. Sense amplifier (SA) assist equalize-sensing (SAES) is implemented for high accuracy sensing operation
Keywords
NOR circuits; buffer circuits; flash memories; sequential circuits; data buffer; multilevel contact-less flash memory; program architecture; read architecture; sense amplifier assist equalize-sensing; sequential program; virtual ground NOR flash memory; Buffer storage; Cellular phones; Computer buffers; Flash memory; Fluctuations; Indium tin oxide; Interference cancellation; Laboratories; Operational amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
1-4244-0006-6
Type
conf
DOI
10.1109/VLSIC.2006.1705337
Filename
1705337
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