Design of 60 GHz pulse receiver building blocks in CMOS

Author

Omuz, Berk ; Oneu, Ahmet

Author_Institution

Dept. of Electrics & Electron., Bogazici Univ., Istanbul, Turkey

fYear

2013

fDate

9-11 May 2013

Firstpage

142

Lastpage

146

Abstract

In this work, nonlinear millimeter-wave pulse detection property of CMOS FETs is studied for high-speed impulse radio. To investigate the pulse detection property, a low-power 60 GHz multi-Gbps pulse receiver is designed and implemented in a 90 nm CMOS process technology. Receiver structures which are suitable for short-range, high-speed and low-power data communications applications are discussed.

Keywords

CMOS integrated circuits; MOSFET; low-power electronics; millimetre wave integrated circuits; radio receivers; ultra wideband communication; CMOS FET; CMOS process technology; frequency 60 GHz; high-speed data communication; high-speed impulse radio; low-power data communication; low-power pulse receiver; nonlinear millimeter-wave pulse detection property; receiver structure; short-range data communication; size 90 nm; Buildings; CMOS integrated circuits; Field effect transistors; Inductors; Microwave amplifiers; Microwave measurement; Radio frequency; 60-GHz; CMOS; OOK; detector; millimeter-wave; multi Gbps; nonlinear; pulse; receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Technological Advances in Electrical, Electronics and Computer Engineering (TAEECE), 2013 International Conference on

Conference_Location

Konya

Print_ISBN

978-1-4673-5612-1

Type

conf

DOI

10.1109/TAEECE.2013.6557211

Filename

6557211