DocumentCode :
2627941
Title :
A SRAM Core Architecture with Adaptive Cell Bias Scheme
Author :
Yu, Hak-soo ; Kim, Nam-Seog ; Son, Young-Jae ; Kim, Yong-Goel ; Kim, Hyo-Chang ; Cho, Uk-Rae ; Byun, Hyun-Geun
Author_Institution :
Memory Div., Samsung Electron., Kyeoggi-Do
fYear :
0
fDate :
0-0 0
Firstpage :
128
Lastpage :
129
Abstract :
This paper describes an adaptive cell bias scheme that is proposed to achieve high performance and stability for a low power, high speed, and high density SRAM core with less process variation. The proposed scheme is featured with constrained-successive cell bias optimization method that determines the optimal cell bias condition sequentially to meet both the speed and stability target of a given SRAM core. The architecture with adaptive cell bias scheme is applied to a 144Mb double stacked S3 SRAM and leads to 49% reduction in SRAM core performance parameter variations with 8% area overhead. The power reduction is 21%
Keywords :
SRAM chips; circuit optimisation; circuit stability; high-speed integrated circuits; integrated circuit design; low-power electronics; memory architecture; 144 MBytes; SRAM core architecture; adaptive cell bias scheme; cell bias optimization; optimal cell bias; power reduction; Adaptive control; Constraint optimization; Controllability; Degradation; Memory architecture; Optimization methods; Programmable control; Random access memory; Stability; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
Type :
conf
DOI :
10.1109/VLSIC.2006.1705343
Filename :
1705343
Link To Document :
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