Title :
Self-Repairing SRAM for Reducing Parametric Failures in Nanoscaled Memory
Author :
Mukhopadhyay, Saibal ; Kim, Keejong ; Mahmoodi, Hamid ; Datta, Animesh ; Park, Dongkyu ; Roy, Kaushik
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
We present a self-repairing SRAM to reduce parametric failures using an on-chip leakage sensor and application of proper body bias. Simulations in a predictive 70nm technology show 5-40% (depending on inter-die Vt variation) improvement in SRAM yield. A test-chip is fabricated and measured in 0.13 mum CMOS to demonstrate operation of the self-repair system
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit yield; nanotechnology; sensors; 0.13 micron; 70 nm; CMOS; body bias; nanoscaled memory; on-chip leakage sensor; parametric failures; self-repairing SRAM; Automatic testing; CMOS technology; Circuits; Leak detection; Mirrors; Monitoring; Predictive models; Random access memory; Sensor arrays; System testing;
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
DOI :
10.1109/VLSIC.2006.1705345
