DocumentCode :
2627982
Title :
Analytical model of nanoscale piezoresistor
Author :
Gridchin, Victor A. ; Gridchin, Alexander V. ; Bunzina, Valentina Yu
Author_Institution :
Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Novosibirsk
fYear :
2008
fDate :
23-29 June 2008
Firstpage :
189
Lastpage :
192
Abstract :
The simple phenomenological model of nanoscale piezoresistor is suggested. An analytical description of the influence of shear strains caused by existing the free borders of piezoresistor, on normal strains epsiv1 and epsiv2 is given. It allows to interpret correctly the experimental data. It is shown that under the decreasing the cross-section of p-type nanoscale piezoresistor less than 4000 nm2 the components m11 and m12 are sharply increasing whereas component m44 stays without significant changes.
Keywords :
microsensors; nanoelectronics; piezoresistive devices; resistors; nanoscale piezoresistor; phenomenological model; piezoresistor cross-section; shear strains; Analytical models; Capacitive sensors; Geometry; Hydrogen; Nanoscale devices; Nanostructures; Piezoresistance; Protection; Resistors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Strategic Technologies, 2008. IFOST 2008. Third International Forum on
Conference_Location :
Novosibirsk-Tomsk
Print_ISBN :
978-1-4244-2319-4
Electronic_ISBN :
978-1-4244-2320-0
Type :
conf
DOI :
10.1109/IFOST.2008.4602841
Filename :
4602841
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2627982
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