• DocumentCode
    2627982
  • Title

    Analytical model of nanoscale piezoresistor

  • Author

    Gridchin, Victor A. ; Gridchin, Alexander V. ; Bunzina, Valentina Yu

  • Author_Institution
    Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Novosibirsk
  • fYear
    2008
  • fDate
    23-29 June 2008
  • Firstpage
    189
  • Lastpage
    192
  • Abstract
    The simple phenomenological model of nanoscale piezoresistor is suggested. An analytical description of the influence of shear strains caused by existing the free borders of piezoresistor, on normal strains epsiv1 and epsiv2 is given. It allows to interpret correctly the experimental data. It is shown that under the decreasing the cross-section of p-type nanoscale piezoresistor less than 4000 nm2 the components m11 and m12 are sharply increasing whereas component m44 stays without significant changes.
  • Keywords
    microsensors; nanoelectronics; piezoresistive devices; resistors; nanoscale piezoresistor; phenomenological model; piezoresistor cross-section; shear strains; Analytical models; Capacitive sensors; Geometry; Hydrogen; Nanoscale devices; Nanostructures; Piezoresistance; Protection; Resistors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Strategic Technologies, 2008. IFOST 2008. Third International Forum on
  • Conference_Location
    Novosibirsk-Tomsk
  • Print_ISBN
    978-1-4244-2319-4
  • Electronic_ISBN
    978-1-4244-2320-0
  • Type

    conf

  • DOI
    10.1109/IFOST.2008.4602841
  • Filename
    4602841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2627982