Title :
Critical evaluation of uniformity and contamination in porous silicon SOI wafers
Author :
Kelly, Michael J. ; Guilinger, Terry R. ; Tsao, Sylvia S. ; Chambers, William B. ; Fischer, Gary J. ; Sippio, Roxanna R.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Summary form only given. Three aspects of porous silicon (PS) formation that could affect its compatibility with VLSI manufacturing processes are evaluated: (1) chemical contamination, (2) particulate contamination, and (3) PS uniformity. Porous silicon anodization equipment and procedures developed to optimize the uniformity of porous silicon-based SOI wafers are also described. Inductively coupled plasma atomic emission spectroscopy and surface-scan measurements indicate there is no significant chemical or particle contamination associated with the porous silicon process
Keywords :
VLSI; anodisation; atomic emission spectroscopy; elemental semiconductors; porous materials; semiconductor epitaxial layers; semiconductor technology; semiconductor-insulator boundaries; silicon; ICP atomic emission spectroscopy; SOI wafers; Si surface; VLSI manufacturing processes; anodization equipment; chemical contamination; compatibility; elemental semiconductor; particulate contamination; porous Si; surface-scan measurements; uniformity; Atomic measurements; Chemical processes; Contamination; Manufacturing processes; Plasma chemistry; Plasma materials processing; Plasma measurements; Silicon; Spectroscopy; Very large scale integration;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69768
