DocumentCode
2628062
Title
A Millimeter-Wave Schottky Diode Detector in 130-nm CMOS Technology
Author
Seok, Eunyoung ; Cao, Changhua ; Sankaran, Swaminathan ; O, Kenneth K.
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
fYear
0
fDate
0-0 0
Firstpage
142
Lastpage
143
Abstract
A 182-GHz Schottky barrier diode detector has been demonstrated in 130-nm foundry CMOS using signals generated on-chip by modulating the bias current of a push-push voltage controlled oscillator as input. This work demonstrated that it is possible to build a detector operating near the top end of millimeter-wave range using digital CMOS
Keywords
CMOS digital integrated circuits; Schottky diodes; millimetre wave detectors; millimetre wave integrated circuits; voltage-controlled oscillators; 130 nm; 182 GHz; Schottky barrier diode detector; bias current modulation; digital CMOS technology; millimeter-wave detector; voltage controlled oscillator; CMOS technology; Circuits; Detectors; Frequency; Millimeter wave technology; Power generation; Schottky diodes; Signal detection; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
1-4244-0006-6
Type
conf
DOI
10.1109/VLSIC.2006.1705350
Filename
1705350
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