DocumentCode
2628089
Title
Modeling and Simulation of Market Dynamics for Successive Generation of Flash Memory
Author
Li, Yiming ; Chiang, Su-Yun
Author_Institution
Nat. Chiao Tung Univ., Hsinchu
fYear
2007
fDate
21-23 Nov. 2007
Firstpage
1668
Lastpage
1673
Abstract
Impressive growth of the information products market has been sustained by the availability of successful semiconductor non-volatile memory technologies. The key driver is right the flash memory for the mass storage application in portable electronic systems. In this work, we study the market dynamics of successive generations of flash memory using a growth model. The adopted model considers non-uniform influence, asymmetric diffusion, and heterogeneity of the population of potential adaptors. The nonlinear growth model is solved numerically and applied to explore the marketing growth of flash memory in the past years. New technologies of flash memory diffuse through a population of potential buyers over time; the model provides a basis for assessing and forecasting the influence of recent technologies on earlier ones. We further examine the successive generations of flash memory from 128 Mb to 1 Gbit. Comparison of the simulated results with the realistic data validates the theoretical findings so as to forecast the growth dynamics of market among different generations.
Keywords
flash memories; integrated memory circuits; flash memory; information products market; market dynamics; mass storage; portable electronic systems; semiconductor nonvolatile memory technology; Cities and towns; Conference management; Driver circuits; Economic forecasting; Flash memory; Information technology; Nonvolatile memory; Predictive models; Technological innovation; Technology management;
fLanguage
English
Publisher
ieee
Conference_Titel
Convergence Information Technology, 2007. International Conference on
Conference_Location
Gyeongju
Print_ISBN
0-7695-3038-9
Type
conf
DOI
10.1109/ICCIT.2007.324
Filename
4420492
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