Title :
Effects of wire-bond lift-off on gate circuit of IGBT power modules
Author :
Zhou, Luowei ; Zhou, Shengqi
Author_Institution :
Electr. Eng. Coll. of Chongqing Univ., Chongqing, China
Abstract :
Wire-bond lift-off is one of the main failure mechanisms encountered in IGBT power modules, due to thermal stress subjected in operation. To evaluate reliability degradation of IGBT, phenomena of early fault phase are essential. In this paper, electrical transient response of gate driver circuit after some wire-bonds lift-off is investigated, and the deviation observed will advance the fault prognostic of IGBT as precursor.
Keywords :
driver circuits; insulated gate bipolar transistors; integrated circuit reliability; transient response; IGBT power module; electrical transient response; failure mechanism; gate driver circuit; thermal stress; wire-bond lift-off effects; Driver circuits; Inductance; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Reliability; SPICE; IGBT; lift-off; prognostic; reliability; wire-bond;
Conference_Titel :
Power Electronics and Motion Control Conference (EPE/PEMC), 2010 14th International
Conference_Location :
Ohrid
Print_ISBN :
978-1-4244-7856-9
DOI :
10.1109/EPEPEMC.2010.5606581
