Title :
A 128Mb Floating Body RAM(FBRAM) on SOI with Multi-Averaging Scheme of Dummy Cell
Author :
Ohsawa, Takashi ; Higashi, Tomoki ; Fujita, Katsuyuki ; Hatsuda, Kosuke ; Ikumi, Nobuyuki ; Shino, Tomoaki ; Nakajima, Hiroomi ; Minami, Yoshihiro ; Kusunoki, Naoki ; Sakamoto, Atsushi ; Nishimura, Jun ; Hamamoto, Takeshi ; Fujii, Shuso
Author_Institution :
SoC Res. & Dev. Center, Toshiba Corp. Semicond. Co., Yokohama
Abstract :
A 128Mbit FBRAM using the floating body cell (FBC) the size of 0.17mum2 (6.24F2 with F=0.165mum) was successfully fabricated and a high bit yield (~99.999%) was obtained
Keywords :
memory architecture; random-access storage; silicon-on-insulator; 128 Mbit; SOI; floating body RAM; floating body cell; multiaveraging scheme; Capacitors; Charge pumps; Circuits; Large scale integration; Microelectronics; Random access memory; Research and development; Semiconductor device measurement; Silicon; Voltage;
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
DOI :
10.1109/VLSIC.2006.1705369
