• DocumentCode
    2628644
  • Title

    Thermal techniques to improve ZnO-based FBAR devices characteristics

  • Author

    Linh Mai ; Ngoc-Hung Do ; Tuan-Anh Hoang ; Van-Su Tran ; Lan-Phuong Bui Pham ; Thanh-Thao Nguyen Thi ; Hung Ngoc Le

  • Author_Institution
    Sch. of Electr. Eng., Int. Univ., Ho Chi Minh City, Vietnam
  • fYear
    2009
  • fDate
    12-14 Oct. 2009
  • Firstpage
    183
  • Lastpage
    186
  • Abstract
    The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss (S11) and quality factor (Qs/p). These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.
  • Keywords
    acoustic resonators; bulk acoustic wave devices; thin films; zinc compounds; Bragg reflectors; FBAR device characteristics; FBAR resonance performance; ZnO; annealing process; film bulk acoustic resonator devices; quality factor; return loss; sintering process; thermal treatment techniques; Annealing; Argon; Electrodes; Film bulk acoustic resonators; Piezoelectric films; Radio frequency; Resonance; Silicon; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Technologies for Communications, 2009. ATC '09. International Conference on
  • Conference_Location
    Hai Phong
  • Print_ISBN
    978-1-4244-5139-5
  • Type

    conf

  • DOI
    10.1109/ATC.2009.5349577
  • Filename
    5349577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2628644