DocumentCode

26287

Title

Improvement of $V_{\\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\\rm PEALD}\\hbox {-}{\\rm</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Woojin Choi ; Hojin Ryu ; Namcheol Jeon ; Minseong Lee ; Ho-Young Cha ; Kwang-Seok Seo</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>35</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2014</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fDate</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Jan. 2014</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>30</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>32</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>In this letter, reduction of threshold voltage instability in gate recessed normally-off GaN metal insulator semiconductor high electron mobility transistors with SiN<sub>x</sub> gate insulator was investigated. A plasma enhanced atomic layer deposition technique was successfully employed for very thin SiN<sub>x</sub> (5 nm) as an interfacial layer. The hysteresis and drift of threshold voltage in transfer curve and the forward biased gate leakage current were effectively reduced.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>III-V semiconductors; MIS devices; atomic layer deposition; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; GaN; PEALD; SiN<sub>x</sub>; forward biased gate leakage current; interfacial layer; metal insulator semiconductor high electron mobility transistors; normally-off MIS-HEMT; plasma enhanced atomic layer deposition technique; threshold voltage instability reduction; transfer curve; Gallium nitride; Hysteresis; Insulators; Logic gates; Plasmas; Silicon; Threshold voltage; GaN; gate leakage current; metal insulator semiconductor high electron mobility transistors (MIS-HEMTs); normally-off; plasma enhanced atomic layer deposition (PEALD); silicon nitride; threshold voltage instability;</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Device Letters, IEEE</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0741-3106</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/LED.2013.2291551</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6684298</div></div> </li> <div class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center'><div class='col-12 col-md-3 fw-bold mb-2 mb-md-0'><span class='text-muted small'>Link To Document</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><a class='text-break' href='https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=26287' target='_blank' rel=$ https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=26287