Title :
A 1.8 to 4.2 GHz YIG Tuned Transistor Oscillator with a Wideband Buffer Amplifier
Abstract :
The recent availability of accurately characterized transistors with maximum frequencies of oscillation in excess of 7 GHz has made possible the development of electrically tunable oscillators and wideband amplifiers with greater than octave coverage in the microwave region. Utilizing these devices on thin film microcircuits allows for more complex designs and the combining of functions on a single substrate. The component to be described combines a YIG tuned oscillator and a wideband amplifier on a .500 by .375 inch sapphire substrate.
Keywords :
Broadband amplifiers; Coupling circuits; Impedance; Inductance; Microwave oscillators; RLC circuits; Reflection; Resonant frequency; Saturation magnetization; Substrates;
Conference_Titel :
Microwave Symposium, 1969 G-MTT International
Conference_Location :
Dallas TX, USA
DOI :
10.1109/GMTT.1969.1122733
