DocumentCode
2628838
Title
A 1.8 to 4.2 GHz YIG Tuned Transistor Oscillator with a Wideband Buffer Amplifier
Author
Dupre, John J.
fYear
1969
fDate
5-7 May 1969
Firstpage
432
Lastpage
438
Abstract
The recent availability of accurately characterized transistors with maximum frequencies of oscillation in excess of 7 GHz has made possible the development of electrically tunable oscillators and wideband amplifiers with greater than octave coverage in the microwave region. Utilizing these devices on thin film microcircuits allows for more complex designs and the combining of functions on a single substrate. The component to be described combines a YIG tuned oscillator and a wideband amplifier on a .500 by .375 inch sapphire substrate.
Keywords
Broadband amplifiers; Coupling circuits; Impedance; Inductance; Microwave oscillators; RLC circuits; Reflection; Resonant frequency; Saturation magnetization; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1969 G-MTT International
Conference_Location
Dallas TX, USA
Type
conf
DOI
10.1109/GMTT.1969.1122733
Filename
1122733
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