• DocumentCode
    2628854
  • Title

    Low-voltage active diode rectifier for pyroelectric harvesting cell

  • Author

    Amokrane, Mounir ; Baysse, Arnaud ; Nogarede, Bertrand ; Rguiti, Mohamed

  • Author_Institution
    LAPLACE INPT/ENSEEIHT, Univ. of Toulouse, Toulouse, France
  • fYear
    2012
  • fDate
    25-28 Oct. 2012
  • Firstpage
    1055
  • Lastpage
    1060
  • Abstract
    This paper studies pyroelectric conversion using PLZT cell and diode rectifier. The objective of this work is to observe the possibility of a power supply via an active element. For this purpose, an active diode based rectifier for pyroelectric harvesting systems is presented, simulated and tested on an experimental device. Moreover a comparison between this structure and 2 other is done. The novelty of the proposed rectifier lies in the positioning of the elements, specially the comparators, and the use of resistors to take into account the time response of the comparators. As a result, a constant output voltage of 2.47 V was obtained using the active diode rectifier for temperature oscillation of 32 °C at a frequency of 100 mHz and for a 32.6 MΩ load connected. This represents a gain of 32 % compared with a structure based on p-MOS and a 179 % profit in comparison with a conventional Schottky diode structure. Furthermore, results showed that the maximum power is extracted with the proposed structure and it reaches 0.113 μW for a frequency of 50 mHz and 0.244 μW for a 100 mHz temperature variation. This represents a gain of at least 93 % compared to the two other structures.
  • Keywords
    comparators (circuits); energy harvesting; power semiconductor diodes; power supply circuits; pyroelectric devices; rectifying circuits; resistors; PLZT; PLZT cell; Schottky diode structure; active element; comparators; energy scavenging; frequency 100 mHz; frequency 50 mHz; low-voltage active diode rectifier; p-MOS; power 0.113 muW; power 0.244 muW; power supply; pyroelectric harvesting cell system; resistance 32.6 Mohm; resistors; temperature 32 degC; voltage 2.47 V; Argon; Heating; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society
  • Conference_Location
    Montreal, QC
  • ISSN
    1553-572X
  • Print_ISBN
    978-1-4673-2419-9
  • Electronic_ISBN
    1553-572X
  • Type

    conf

  • DOI
    10.1109/IECON.2012.6388574
  • Filename
    6388574