Title :
200 Watt Solid State UHF Amplifier
Author :
Staiman, David ; Breese, Maurice
Abstract :
A high power transistor amplifier with an output of 200 W peak at a center frequency of 432 MHz is described. Eight TRW 2N5177 transistors are operated in parallel by means of a network of split-tee hybrid junctions as shown in Figure 1. The individual amplifier circuits, as well as the hybrid junction network, are etched microstrip circuits on high purity alumina substrates.
Keywords :
Bandwidth; Etching; Gold; Hybrid junctions; Impedance; Integrated circuit interconnections; Power amplifiers; Pulse amplifiers; Pulse measurements; Solid state circuits;
Conference_Titel :
Microwave Symposium, 1969 G-MTT International
Conference_Location :
Dallas TX, USA
DOI :
10.1109/GMTT.1969.1122735
