DocumentCode
2629011
Title
Finite-element thermal modeling of N-based HEMT structures
Author
Costi, F. ; Bertoluzza, F. ; Delmonte, N. ; Sozzi, G. ; Menozzi, R.
Author_Institution
University of Parma, Usberti, 181/A - Parma, Italy
fYear
2008
fDate
12-12 Oct. 2008
Firstpage
15
Lastpage
24
Abstract
The aim of this paper is to show and discuss results of 3D finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and heat removal strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal management.
Keywords
Aluminum gallium nitride; Boundary conditions; Fingers; Finite element methods; Gallium nitride; HEMTs; Passivation; Substrates; Temperature distribution; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
ROCS Workshop, 2008 [Reliability of Compound Semiconductors Workshop]
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7908-0120-5
Type
conf
DOI
10.1109/ROCS.2008.5483614
Filename
5483614
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