Title :
Finite-element thermal modeling of N-based HEMT structures
Author :
Costi, F. ; Bertoluzza, F. ; Delmonte, N. ; Sozzi, G. ; Menozzi, R.
Author_Institution :
University of Parma, Usberti, 181/A - Parma, Italy
Abstract :
The aim of this paper is to show and discuss results of 3D finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and heat removal strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal management.
Keywords :
Aluminum gallium nitride; Boundary conditions; Fingers; Finite element methods; Gallium nitride; HEMTs; Passivation; Substrates; Temperature distribution; Thermal management;
Conference_Titel :
ROCS Workshop, 2008 [Reliability of Compound Semiconductors Workshop]
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7908-0120-5
DOI :
10.1109/ROCS.2008.5483614
