DocumentCode :
2629130
Title :
HBT lifetime prediction as a function of temperature
Author :
Henderson, Tim ; Hitt, John ; Decker, Ken ; Buckley, Keith
Author_Institution :
TniQuint Semiconductor, Hillsboro, Oregon
fYear :
2008
fDate :
12-12 Oct. 2008
Firstpage :
137
Lastpage :
144
Abstract :
Make observations on HBT testing and how test conditions affect projected MTTF and Ea. Baseline bias stress data for TQS BiHEMT process active devices: HBT, D-mode pHEMT, E-mode pHEMT.
Keywords :
Benchmark testing; Gallium arsenide; Heterojunction bipolar transistors; Life testing; PHEMTs; Packaging; Semiconductor process modeling; Substrates; Temperature; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ROCS Workshop, 2008 [Reliability of Compound Semiconductors Workshop]
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7908-0120-5
Type :
conf
DOI :
10.1109/ROCS.2008.5483622
Filename :
5483622
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2629130
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