Method for determining DC/RF survivability limits of semiconductor circuits

Methods for determining long term product reliability due to channel temperature, environmental conditions or bias have been thoroughly documented and understood. In contrast, intermittent DC/RF overdrive survivability limits have been looked at, but for the most part not fully understood [1-5]. This is aggravated by the fact that most datasheets only point to one absolute maximum operating value, which many times is confused by a survivability limit. This paper discusses the differences between these two distinct specifications and a method we have developed for determining survivability limits based on input power and bias voltage.