Title :
RF Arrhenius life testing of X-band GaN HEMITs
Author :
Mittereder, J.A. ; Binari, S.C. ; Via, G.D. ; Roussos, I.A. ; Caldwell, J.D. ; Calame, J.P.
Author_Institution :
Naval Research Laboratory, Washington DC 20375
Abstract :
We have conducted an accelerated temperature, RF Arrhenius life test study of GaN HEMTs delivered under the DARPA Wide Bandgap Semiconductors for RF Applications (WBGS-RF) program. The transistors were embedded in a single-stage MMIC with 50 ohm input and output impedances. The HEMTs were of source-connected field-plate design with a total gate width of 1.25 mm.
Keywords :
Gallium nitride; HEMTs; Life estimation; Life testing; MMICs; MODFETs; Radio frequency; Semiconductor device testing; Temperature; Wide band gap semiconductors;
Conference_Titel :
ROCS Workshop, 2008 [Reliability of Compound Semiconductors Workshop]
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7908-0120-5
DOI :
10.1109/ROCS.2008.5483627
