DocumentCode :
2629237
Title :
Influence of annealing on tellurium precipitates in (Cd,Mn)Te:V crystals
Author :
Kochanowska, D. ; Mycielski, A. ; Witkowska-Baran, M. ; Szadkowski, A. ; Witkowska, B. ; Kaliszek, W. ; Cui, Y. ; James, R.B.
Author_Institution :
Cardinal S. Wyszynski University, Department of Material Natural Science, College of Science, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
fYear :
2008
fDate :
19-25 Oct. 2008
Firstpage :
202
Lastpage :
206
Abstract :
The authors believe that (Cd,Mn)Te can be used as a material for gamma- and X-ray detectors [1]. The investigations are concentrated on producing, by Bridgman method, of high quality (Cd,Mn)Te crystals with high resistivity (109 Ωcm).
Keywords :
Annealing; Artificial intelligence; Cadmium; Conductivity; Crystalline materials; Crystallization; Crystals; Doping; Tellurium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
ISSN :
1095-7863
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2008.4775153
Filename :
4775153
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2629237
بازگشت