Title :
Effect of sulfur treatment on the γ-ray detection quality of Al/CdTe/Pt Schottky diode
Author :
Yamazato, Masaaki ; Yamauchi, Tetsuya ; Ohno, Ryoichi ; Higa, Akira
Author_Institution :
Electrical and Electronics Engineering Department, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, Japan
Abstract :
We have studied the effects of sulfur treatment on the performance of an Al/CdTe/Pt Schottky diode. The CdTe(111)Te surface was treated by (NH4)2Sx solution before deposition of Al Schottky electrode. The Te-rich layer on the CdTe surface was removed and the CdS thin layer was grown by sulfur treatment. After 2 min sulfur treatment, the leakage current at 600 V applied voltage of Al/CdTe/Pt Schottky diode was remarkably decreased than non-treated sample. Also, the polarization phenomenon was drastically suppressed by sulfur treatment. After 20 hours from the start of the γ-ray detection, FWHM of 59.5 keV showed less than 2.0 keV.
Keywords :
Leak detection; Leakage current; Pulse amplifiers; Pulse measurements; Radiation detectors; Schottky diodes; Surface treatment; Voltage; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2008.4775160
