• DocumentCode
    2629686
  • Title

    Technique of making good electrical contacts to high resistivity (Cd,Mn) Te crystals

  • Author

    Witkowska-Baran, M. ; Mycielski, A. ; Kochanowska, D. ; Szadkowski, A.J. ; Jakiela, R. ; Witkowska, B. ; Kaliszek, W. ; Domagala, J. ; Lusakowska, E. ; Domukhovski, V. ; Dybko, K. ; Cui, Y. ; James, R.

  • Author_Institution
    Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
  • fYear
    2008
  • fDate
    19-25 Oct. 2008
  • Firstpage
    327
  • Lastpage
    332
  • Abstract
    The authors believe that semiinsulating (Cd,Mn)Te crystals can successfully replace the commonly used (Cd,Zn)Te crystals as a material for manufacturing large-area X- and Gamma- ray detectors. Good quality, high-resistivity (109 ÷ 1010 Ω·cm) crystals of (Cd,Mn)Te:V are grown by the Bridgeman method. Doping (≈1016 cm−3) with vanadium, which acts as a compensating dopant, and special annealing in cadmium vapours, which reduces the number of cadmium vacancies existing in the crystal after the growth, ensure high resistivity of the crystals.
  • Keywords
    Cadmium; Conductivity; Contacts; Crystalline materials; Crystals; Doping; Gamma ray detection; Gamma ray detectors; Manufacturing; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
  • Conference_Location
    Dresden, Germany
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-2714-7
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2008.4775179
  • Filename
    4775179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2629686