DocumentCode :
2629686
Title :
Technique of making good electrical contacts to high resistivity (Cd,Mn) Te crystals
Author :
Witkowska-Baran, M. ; Mycielski, A. ; Kochanowska, D. ; Szadkowski, A.J. ; Jakiela, R. ; Witkowska, B. ; Kaliszek, W. ; Domagala, J. ; Lusakowska, E. ; Domukhovski, V. ; Dybko, K. ; Cui, Y. ; James, R.
Author_Institution :
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
fYear :
2008
fDate :
19-25 Oct. 2008
Firstpage :
327
Lastpage :
332
Abstract :
The authors believe that semiinsulating (Cd,Mn)Te crystals can successfully replace the commonly used (Cd,Zn)Te crystals as a material for manufacturing large-area X- and Gamma- ray detectors. Good quality, high-resistivity (109 ÷ 1010 Ω·cm) crystals of (Cd,Mn)Te:V are grown by the Bridgeman method. Doping (≈1016 cm−3) with vanadium, which acts as a compensating dopant, and special annealing in cadmium vapours, which reduces the number of cadmium vacancies existing in the crystal after the growth, ensure high resistivity of the crystals.
Keywords :
Cadmium; Conductivity; Contacts; Crystalline materials; Crystals; Doping; Gamma ray detection; Gamma ray detectors; Manufacturing; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
ISSN :
1095-7863
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2008.4775179
Filename :
4775179
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2629686
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