Characterization and application of next-generation SiC power devices for high-frequency isolated bidirectional DC-DC converter

Author

Zhao, Biao ; Song, Qiang ; Liu, Wenhua ; Sun, Yandong

Author_Institution

Tsinghua Univ., Beijing, China

fYear

2012

fDate

25-28 Oct. 2012

Firstpage

281

Lastpage

286

Abstract

In this paper, the application performance characteristics of high-frequency isolated bidirectional DC-DC converter (IBDC) based on SiC-DMOS and SiC-SBD samples provided by ROHM SEMICONDUCTOR Inc. are analyzed. The paper gave the basic design procedure of SiC-based converter, and established the mathematical model of power losses by analyzing the switching characteristic of the converter. On this basis, the power loss and efficiency characteristics of the SiC-based converter were analyzed and the related experimental results were presented. Theoretical analysis and experimental results show that the SiC-based converter has better performance than the Si-based converter; it will have a wide application prospect in the future smart electricity network.

Keywords

DC-DC power convertors; MOS integrated circuits; silicon compounds; IBDC; SiC; SiC-DMOS; SiC-SBD; SiC-based converter; bidirectional DC-DC converter; high-frequency isolated DC-DC converter; next-generation SiC power device; power efficiency; power losses; smart electricity network; switching characteristic;

fLanguage

English

Publisher

ieee

Conference_Titel

IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society

Conference_Location

Montreal, QC

ISSN

1553-572X

Print_ISBN

978-1-4673-2419-9

Electronic_ISBN

1553-572X

Type

conf

DOI

10.1109/IECON.2012.6388633

Filename

6388633