Readout ICs for high spatial resolution slot-scan imaging with CZT or CdTe pixel arrays

We have developed a new version of the MARY (MAmmogRaphY) pixel detector with its custom readout integrated circuit (IC) optimized for electron collection in semiconductor detectors such as CdZnTe (CZT), CdTe, a-Se and GaAs. This new pixel detector and readout IC, the MARY-N50, is essentially comprised of a 192 x 384 array of channels at a 50 μm x 50 μm pitch, which can be flip-chip bump-bonded with a matching detector pixel array. A 100 μm pitch pixel detector, the MARY-N100, was also developed, with a 64 x 192 pixel array. Standard features of both versions of MARY-N include: TDI (Time Delay Integration) or “staring” CCD readout capability; low noise and wide dynamic range; internal clock drivers; fat zero input; overflow control; multiple independent readout stages (24 for MARY-N50, 8 for MARY-N100) to accommodate large charge collection due to direct conversion.