The Theoretical Model and Simulation of Resonant Sensors

Author

Weiwei, Xing ; Du Yan ; Shangchun, Fan

Author_Institution

Beihang Univ. of Instrum. Sci. & Optoelectron Eng., Beijing, China

Volume

3

fYear

2011

fDate

6-7 Jan. 2011

Firstpage

982

Lastpage

985

Abstract

The resonator simulator provides a new method for researching the resonant sensor closed-loop circuit. In this paper, the mathematic model of silicon pressure resonator is established to design the circuit with resonator characteristic. Firstly the relation between pressure and the amplitude-frequency characteristic of the resonant beam is deduced. Secondly, combined with the in-out of excitation and pick-up, a complete mathematic model of resonator characteristic is given. Then typical experimental data fitting is made to provide particular parameters for the simulator. Finally a method for the circuit of design is provided.

Keywords

curve fitting; pressure sensors; resonators; Si; amplitude-frequency characteristic; pressure resonator; resonant beam; resonant sensor closed-loop circuit simulation; theoretical model; Fitting; Integrated circuit modeling; Resistors; Resonant frequency; Sensor phenomena and characterization; Silicon; curve fitting; pressure sensor; resonant; theoretical model;

fLanguage

English

Publisher

ieee

Conference_Titel

Measuring Technology and Mechatronics Automation (ICMTMA), 2011 Third International Conference on

Conference_Location

Shangshai

Print_ISBN

978-1-4244-9010-3

Type

conf

DOI

10.1109/ICMTMA.2011.817

Filename

5721654