Proposal and analysis of gate drive circuit suitable for GaN-FET

This paper proposes a novel gate-drive circuit suitable for the GaNFET. The gate-drive makes GaNFET turn-off sufficiently and also reduce a loss in the reverse conduction time which the reverse drain-source current flows to GaNFET at off-state. Moreover, the losses caused by the recovery phenomenon are compared the proposed gate-drive circuit with the conventional gate-drive circuit. In addition, a detailed loss analysis of the proposed gate-drive circuit is stated in this paper. Furthermore, the validity of the proposed circuit is evaluated and discussed from the experimental point of view.