DocumentCode
2630630
Title
Field stop shorted anode trench IGBT for induction heating appliances
Author
Yeon, Jae-Eul ; Park, Min-Young ; Cho, Kyu-Min ; Kim, Hee-Jun
Author_Institution
HVPCIA, Consumer Power Syst. Team, Fairchild Semicond., South Korea
fYear
2012
fDate
25-28 Oct. 2012
Firstpage
422
Lastpage
426
Abstract
This paper introduces a newly developed field stop shorted anode trench IGBT with intrinsic body diode like power MOSFETs, and presents its effectiveness for the single ended resonant inverter in induction heating applications. Although the new device combines both IGBT and body diode functions, it can provide better performances by means of an advanced field stop trench IGBT technology. The effectiveness of the new device is validated in an experiment using 1.8kW single-ended induction heating resonant inverter.
Keywords
domestic appliances; induction heating; insulated gate bipolar transistors; power MOSFET; resonant invertors; field stop shorted anode trench IGBT; induction heating appliance; intrinsic body diode; power 1.8 kW; power MOSFET; single ended resonant inverter; Heating; Insulated gate bipolar transistors; High voltage Field Stop IGBT; Induction Heating; Shorted Anode;
fLanguage
English
Publisher
ieee
Conference_Titel
IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society
Conference_Location
Montreal, QC
ISSN
1553-572X
Print_ISBN
978-1-4673-2419-9
Electronic_ISBN
1553-572X
Type
conf
DOI
10.1109/IECON.2012.6388674
Filename
6388674
Link To Document