Title :
Sensing of mid-infrared radiation by engineered quantum nanostructures
Author :
Towe, E. ; Pal, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
This paper provided preliminary results on (In,Ga)As quantum dot detectors that have shown the potential to operate well beyond 150 K. In addition, a review of the latest results in the use of quantum dots in mid-wave infrared detection from 78 K and beyond is presented.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; nanostructured materials; semiconductor quantum dots; (In,Ga)As quantum dot detectors; (InGa)As; engineered quantum nanostructures; midinfrared radiation sensing; Atomic layer deposition; Carrier confinement; Doping; Energy states; Gallium arsenide; Infrared detectors; Nanoparticles; Nanostructures; Quantum dots; Radiation detectors;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1547900
