• DocumentCode
    2630739
  • Title

    Sensing of mid-infrared radiation by engineered quantum nanostructures

  • Author

    Towe, E. ; Pal, D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    This paper provided preliminary results on (In,Ga)As quantum dot detectors that have shown the potential to operate well beyond 150 K. In addition, a review of the latest results in the use of quantum dots in mid-wave infrared detection from 78 K and beyond is presented.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; nanostructured materials; semiconductor quantum dots; (In,Ga)As quantum dot detectors; (InGa)As; engineered quantum nanostructures; midinfrared radiation sensing; Atomic layer deposition; Carrier confinement; Doping; Energy states; Gallium arsenide; Infrared detectors; Nanoparticles; Nanostructures; Quantum dots; Radiation detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1547900
  • Filename
    1547900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2630739