DocumentCode
2630772
Title
Effects of strain and barrier height of thin interlayer on InAs quantum dots grown on GaInAsP/InP (100) by metalorganic chemical vapor deposition
Author
Barik, S. ; Tan, H.H. ; Barik M ; Jagadish, C.
Author_Institution
Australian Nat. Univ., Canberra, ACT, Australia
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
128
Lastpage
129
Abstract
Our theoretical model shows that strain and barrier height of the GaAs or InGaAs interlayer should be considered to explain the experimentally observed blue-shift in the photoluminescence of InAs quantum dots grown on GaInAsP/InP (100).
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line shift; GaAs; GaInAsP-InP; InAs; InAs quantum dots; InGaAs; barrier height; blue-shift; interlayer strain; metalorganic chemical vapor deposition; photoluminescence; Buffer layers; Capacitive sensors; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum dot lasers; Quantum dots; Quantum mechanics; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1547903
Filename
1547903
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