• DocumentCode
    2631438
  • Title

    Electro spinning under sub critical voltage

  • Author

    Lai, Xiting ; Dezhi Wu ; Sun, Daoheng

  • Author_Institution
    Dept. of Mech. & Electr. Eng., Xiamen Univ., Xiamen, China
  • fYear
    2010
  • fDate
    20-23 Jan. 2010
  • Firstpage
    1170
  • Lastpage
    1173
  • Abstract
    A simple method was proposed to reduce the critical voltage of electrospinning and gain finer nanofiber. Beside the collector, a ground inducing plate was introduced into the electrospinning experiment setup, and the distance between spinneret and inducing plate can be adjusted. Under the same applied voltage, the electrical field strength around the spinneret increase as the distance between spinneret and inducing plate decreases. When inducing plate moved nearly to the spinneret (the distance is about 1.5~2cm), a charged jet would be leaded out from the Taylor cone due to the higher electrical field strength. An interesting phenomenon was found that electrospinning keep on running, when inducing plate moved away. Therefore, with the help of inducing plate, electrospinning can run under the applied voltage that smaller than critical voltage required in the conventional electrospinning. Bending instability of charged jet would be weaken by the lower applied, and finer nanofiber can be gained by this method. The diameter of nanofiber increase from 141um to 162nm, when the subcritical voltage increasing from 3.75kV to 4.5kV. This method would improve the precise position deposition and diameter controlling of nanofiber.
  • Keywords
    bending; electrospinning; nanofabrication; nanofibres; polymer fibres; Taylor cone; bending instability; charged jet; critical voltage; electrical field strength; electrospinning; ground inducing plate; nanofiber; size 141 nm to 162 nm; spinneret; sub critical voltage; voltage 3.75 kV to 4.5 kV; Electric fields; Lead; Polymers; Power supplies; System-on-a-chip; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
  • Conference_Location
    Xiamen
  • Print_ISBN
    978-1-4244-6543-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2010.5721896
  • Filename
    5721896