Design of a Bandgap Current Reference with Wide Range of Output Voltage in a 0.18µm Bi-CMOS Process

Author

Yueyang, Chen ; Shun, Zhong ; Hua, Dang

Author_Institution

Sch. of Inf. & Electron, Beijing Inst. of Technol., Beijing, China

Volume

3

fYear

2009

fDate

March 31 2009-April 2 2009

Firstpage

384

Lastpage

386

Abstract

A bandgap voltage reference is designed in this paper with very low power consumption in 0.18 mum Bi-CMOS process. A voltage-current converter is also designed to provide a current reference of 400 muA in 0.18 mum Bi-CMOS process. This new proposed current reference can work properly for output voltage in a wide range between 0.2 V to 1.6 V with output impedance greater than 12.5 kohms. The output current deviates by no more than 1% over a temperature range of 20degC to 100degc and with output voltage widely varying between 0.2 V and 1.6 V. Circuits are simulated by Cadence in TSMC 0.18 mum Bi-CMOS process.

Keywords

BiCMOS integrated circuits; low-power electronics; reference circuits; Bi-CMOS process; Cadence; bandgap current reference design; circuit simulation; current 400 muA; current reference; low power consumption; size 0.18 mum; temperature 20 degC to 100 degC; voltage 0.2 V to 1.6 V; voltage-current converter; Bipolar transistors; CMOS technology; Circuits; Energy consumption; Impedance; Low voltage; Photonic band gap; Resistors; Robust stability; Temperature; CMOS; bandgap; current reference; voltage reference;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Science and Information Engineering, 2009 WRI World Congress on

Conference_Location

Los Angeles, CA

Print_ISBN

978-0-7695-3507-4

Type

conf

DOI

10.1109/CSIE.2009.770

Filename

5170868