Title :
Rapid thermal annealing study of InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
Author :
Fu, L. ; Kuffner, P. ; McKerracher, I. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
In this work, the effects of postgrowth rapid thermal annealing (RTA) on tuning the operating wavelength of self-assembled quantum dots (QDIPs) and its implication for the development of two-color photodetector.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; infrared detectors; optical tuning; photodetectors; rapid thermal annealing; self-assembly; semiconductor growth; semiconductor quantum dots; InGaAs/GaAs quantum dot infrared photodetectors; metal-organic chemical vapor deposition; rapid thermal annealing; self-assembly; two-color photodetector; wavelength tuning; Atomic measurements; Chemical vapor deposition; Dark current; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Photodetectors; Quantum dots; Rapid thermal annealing; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1547962
