DocumentCode
2631776
Title
InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition
Author
Jolley, G. ; Tan, H.H. ; Fu, L. ; Jagadish, C.
Author_Institution
Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
247
Lastpage
248
Abstract
The characteristics of metal organic chemical vapor deposition (MOCVD) grown InGaAs quantum dot infrared photodetectors based on the quantum-dots-in-a-well (DWell) structure are reported.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; semiconductor growth; semiconductor quantum dots; InGaAs; InGaAs quantum dots-in-a-well photodetectors; MOCVD; infrared photodetectors; metal organic chemical vapor deposition; Chemical vapor deposition; Energy states; Indium gallium arsenide; MOCVD; Organic chemicals; Particle scattering; Photoconductivity; Photodetectors; Quantum dot lasers; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1547963
Filename
1547963
Link To Document