DocumentCode :
2631776
Title :
InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition
Author :
Jolley, G. ; Tan, H.H. ; Fu, L. ; Jagadish, C.
Author_Institution :
Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2005
fDate :
22-28 Oct. 2005
Firstpage :
247
Lastpage :
248
Abstract :
The characteristics of metal organic chemical vapor deposition (MOCVD) grown InGaAs quantum dot infrared photodetectors based on the quantum-dots-in-a-well (DWell) structure are reported.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; semiconductor growth; semiconductor quantum dots; InGaAs; InGaAs quantum dots-in-a-well photodetectors; MOCVD; infrared photodetectors; metal organic chemical vapor deposition; Chemical vapor deposition; Energy states; Indium gallium arsenide; MOCVD; Organic chemicals; Particle scattering; Photoconductivity; Photodetectors; Quantum dot lasers; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1547963
Filename :
1547963
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2631776
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