Title :
Light-emitting devices fabricated with CdSe nano-crystals coated on an InGaN/GaN quantum-well structure for polychromatic generation
Author :
Yeh, Dong-Ming ; Lu, Chih-Feng ; Huang, Chi-Feng ; Tang, Tsung-Yi ; Chen, Horng-Shyang ; Huang, Jian-Jang ; Yang, C.C. ; Chuang, Chih-Min ; Su, Wei-Fang
Author_Institution :
Graduate Inst. of Electro-Optical Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
By coating CdSe nano-crystals on an InGaN/GaN quantum well structure, polychromatic LEDs emitting blue and red lights have been implemented. The blue photons emitted by the quantum well structure are absorbed by the CdSe nano-crystals for emitting red light. By fabricating holes on the quantum well structure for filling up the nano-crystal solution, the red emission efficiency can be improved.
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; optical fabrication; quantum well devices; wide band gap semiconductors; CdSe; CdSe nanocrystals; InGaN-GaN; InGaN/GaN quantum-well structure; blue photon emission; light-emitting diode; polychromatic generation; red photon emission; Absorption; Coatings; Displays; Filling; Gallium nitride; Light emitting diodes; Nanoscale devices; Phosphors; Quantum well devices; Zinc compounds;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1547976
