Light-emitting devices fabricated with CdSe nano-crystals coated on an InGaN/GaN quantum-well structure for polychromatic generation

Author

Yeh, Dong-Ming ; Lu, Chih-Feng ; Huang, Chi-Feng ; Tang, Tsung-Yi ; Chen, Horng-Shyang ; Huang, Jian-Jang ; Yang, C.C. ; Chuang, Chih-Min ; Su, Wei-Fang

Author_Institution

Graduate Inst. of Electro-Optical Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

256

Lastpage

257

Abstract

By coating CdSe nano-crystals on an InGaN/GaN quantum well structure, polychromatic LEDs emitting blue and red lights have been implemented. The blue photons emitted by the quantum well structure are absorbed by the CdSe nano-crystals for emitting red light. By fabricating holes on the quantum well structure for filling up the nano-crystal solution, the red emission efficiency can be improved.

Keywords

II-VI semiconductors; III-V semiconductors; cadmium compounds; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; optical fabrication; quantum well devices; wide band gap semiconductors; CdSe; CdSe nanocrystals; InGaN-GaN; InGaN/GaN quantum-well structure; blue photon emission; light-emitting diode; polychromatic generation; red photon emission; Absorption; Coatings; Displays; Filling; Gallium nitride; Light emitting diodes; Nanoscale devices; Phosphors; Quantum well devices; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1547976

Filename

1547976