• DocumentCode
    2632365
  • Title

    Electron trapping in ultrathin SiO2 on Si(001) probed by electric-field-induced second-harmonic generation

  • Author

    Lüpke, G. ; Wang, W. ; Tolk, N.H. ; Feldman, L.C. ; Kiziyalli, I.C.

  • Author_Institution
    Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA
  • fYear
    1998
  • fDate
    10-14 Aug 1998
  • Firstpage
    89
  • Lastpage
    91
  • Abstract
    Electric-field-induced second-harmonic generation (EFISHG) allows the direct observation of charge trapping at near-interface oxide defects, which alters the reflected second-harmonic (SH) signal due to a change of the band-bending in the silicon space-charge region (SCR) at the interface
  • Keywords
    electro-optical effects; optical films; optical harmonic generation; silicon compounds; space charge; EFISHG; Si; Si(001); SiO2; band-bending; charge trapping; electric-field-induced second-harmonic generation; electron trapping; near-interface oxide defects; optical SHG; reflected second-harmonic signal; silicon space-charge region; ultrathin SiO2; Absorption; Electron traps; Laser beams; Laser excitation; Laser transitions; Lead compounds; Regions; Resonance; Silicon; Surface charging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nonlinear Optics '98: Materials, Fundamentals and Applications Topical Meeting
  • Conference_Location
    Kauai, HI
  • Print_ISBN
    0-7803-4950-4
  • Type

    conf

  • DOI
    10.1109/NLO.1998.710192
  • Filename
    710192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2632365