Title :
Electron trapping in ultrathin SiO2 on Si(001) probed by electric-field-induced second-harmonic generation
Author :
Lüpke, G. ; Wang, W. ; Tolk, N.H. ; Feldman, L.C. ; Kiziyalli, I.C.
Author_Institution :
Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Electric-field-induced second-harmonic generation (EFISHG) allows the direct observation of charge trapping at near-interface oxide defects, which alters the reflected second-harmonic (SH) signal due to a change of the band-bending in the silicon space-charge region (SCR) at the interface
Keywords :
electro-optical effects; optical films; optical harmonic generation; silicon compounds; space charge; EFISHG; Si; Si(001); SiO2; band-bending; charge trapping; electric-field-induced second-harmonic generation; electron trapping; near-interface oxide defects; optical SHG; reflected second-harmonic signal; silicon space-charge region; ultrathin SiO2; Absorption; Electron traps; Laser beams; Laser excitation; Laser transitions; Lead compounds; Regions; Resonance; Silicon; Surface charging;
Conference_Titel :
Nonlinear Optics '98: Materials, Fundamentals and Applications Topical Meeting
Conference_Location :
Kauai, HI
Print_ISBN :
0-7803-4950-4
DOI :
10.1109/NLO.1998.710192
