Title :
High-speed germanium-on-insulator photodetectors
Author :
Dehlinger, G. ; Schaub, J.D. ; Koester, S.J. ; Ouyang, Q.C. ; Chu, J.O. ; Grill, A.
Author_Institution :
IBM TJ. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We will present recent results from our work on germanium-on-silicon photodetectors. We demonstrate that the devices display high bandwidth and efficiency at 850 nm, and could be suitable for future 40 Gb/sec optical interconnect applications.
Keywords :
elemental semiconductors; germanium; optical interconnections; photodetectors; semiconductor-insulator boundaries; 40 Gbit/s; 850 nm; Ge-SiO2; bandwidth; germanium-on-insulator photodetectors; optical interconnect; Absorption; Bandwidth; CMOS technology; Costs; Dark current; Detectors; Optical fiber devices; Optical interconnections; Photodetectors; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548000
