Title :
Analysis and design aspects of a desaturation detection circuit for low voltage power MOSFETs
Author :
Wittig, Bjoern ; Boettcher, Matthias ; Fuchs, Friedrich W.
Author_Institution :
Inst. of Power Electron. & Electr. Drives, Christian-Albrechts-Univ. of Kiel, Kiel, Germany
Abstract :
An analysis of a desaturation detection circuit specially designed for low voltage power MOSFETs is presented and design aspects are carried out. The characteristics are a low detection threshold hysteresis, a fast shutdown reaction and a junction temperature compensation. The proposed desaturation detection circuit is described in detail and experimental results are given. The influence of the junction temperature and stray inductances of the package leads on the short circuit detection threshold are pointed out.
Keywords :
integrated circuit design; low-power electronics; power MOSFET; semiconductor junctions; desaturation detection circuit design; junction temperature; low voltage power MOSFET; short circuit detection threshold; stray inductances; Bridge circuits; Inductance; Junctions; Low voltage; MOSFETs; Temperature measurement; Automotive electronics; MOSFET; Power semiconductor device;
Conference_Titel :
Power Electronics and Motion Control Conference (EPE/PEMC), 2010 14th International
Conference_Location :
Ohrid
Print_ISBN :
978-1-4244-7856-9
DOI :
10.1109/EPEPEMC.2010.5606838
