A monolithically integrated bidirectional IGBT: Effect of spatial IGBT elementary cells repartitioning and technology of realization on device performance

Author

Tahir, H. ; Bourennane, H. ; Sanchez, J. -L ; Sarrabayrouse, G. ; Imbernon, E.

Author_Institution

LAAS, CNRS, Toulouse, France

fYear

2010

fDate

6-8 Sept. 2010

Abstract

In this paper, we evaluate through 2D physical simulations the impact of IGBT elementary cells spatial repartitioning on a bidirectional monolithically integrated IGBT device static as well as dynamic performances. We also show how one could improve the on-state voltage drop of the analyzed structure by using an already published technique. Afterwards, we discuss the two technologies that can be used for the realization of the devices and we enumerate the advantages and difficulties inherent to each technology. Moreover, we provide characterization results obtained on unilateral and bidirectional IGBTs realized in our (LAAS-CNRS) clean room using an IGBT flexible technological process.

Keywords

insulated gate bipolar transistors; device performance; dynamic performances; monolithically integrated bidirectional IGBT; on-state voltage drop; realization; spatial IGBT elementary cells; Anodes; Bonding; Cathodes; Insulated gate bipolar transistors; Lithography; Logic gates; Semiconductor process modeling; IGBT; bidirectional IGBT; bonding; realization;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference (EPE/PEMC), 2010 14th International

Conference_Location

Ohrid

Print_ISBN

978-1-4244-7856-9

Type

conf

DOI

10.1109/EPEPEMC.2010.5606842

Filename

5606842