DocumentCode
2632945
Title
Microwave Integrated Tunnel Diode Amplifiers for Broadband, High Performance Receivers
Author
Okean, H.C. ; Meier, P.J.
fYear
1971
fDate
16-19 May 1971
Firstpage
186
Lastpage
187
Abstract
A family of X-band thin-film microstrip tunnel diode amplifiers (TDA´s ) have been developed for use in broadband, high-performance receivers. These TDA´s exhibit half-octave bandwidth capability, with about 9-dB gain per stage over 8.0 to 11.5 GHz, 5.0 to 6.0 dB noise figure (using Ge tunnel diodes), and -14 to -17 dB output level at 1-dB gain compression (using GaAs tunnel diodes). This represents a considerable advance in performance with respect to previously reported MIC - TDA´s, shows a two-stage TDA, incluching an output isolator per stage.
Keywords
Bandwidth; Broadband amplifiers; Diodes; Gallium arsenide; Isolators; Microstrip; Microwave amplifiers; Microwave integrated circuits; Noise figure; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1971 IEEE GMTT International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/GMTT.1971.1122959
Filename
1122959
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